LD80R4S-A Datasheet, PDF (1/4 Pages) Sensortechnics GmbH – Solid State Laser Pumping

LD80R4S-A/B/C/D/E-Z4
Laser Diode
Tentative
Quantum Semiconductor International Co., Ltd.
Ver.0 Aug. 2007
♦OVERVIEW
LD80R4S-A/B/C/D/E-Z4 is a MOCVD grown 808nm band laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 200mW for optoelectronic devices
such as solid state laser pumping and medical use.
♦APPLICATION
- Solid State Laser Pumping
- Medical Use
- Industrial Use
♦FEATURES
- Wavelength
: λp = 808 nm
- Optical Output Power : 200mW (CW)
- Package Type
: TO-18 (φ 5.6mm)
- Polarization
: TE (Electric Field Parallel to the Junction Plane)
- Cap
: removable
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A
LD cathode, PD anode (Fig. 1)
B
LD, PD anode (Fig. 2)
C
LD anode, PD cathode (Fig. 3)
D
LD cathode, No PD (Fig. 4)
E
LD anode, No PD (Fig. 5)
LD80R4S-A
LD80R4S-B
LD80R4S-C
LD80R4S-D
LD80R4S-E
2
2
2
LD
PD
1
3
Fig. 1
2
LD
PD
1
3
Fig. 2
2
LD
PD
1
3
Fig. 3
LD
NO PD
1
3
Fig. 4
LD
NO PD
1
3
Fig. 5