LD68I6S-A Datasheet, PDF (1/4 Pages) Sensortechnics GmbH – Laser Module

LD68I6S-A/B/C
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd
2004. Rev 1.
♦ OVERVIEW
LD68I6S-A/B/C is a MOCVD grown 0.68 m band InGaAlP laser diode with quantum well
structure. It's an attractive light source, with a typical light output power of 30mW for opto-electronic
devices such as Industrials.
♦ APPLICATION
Industrials
Laser Module
♦ FEATURES
Visible Light Output : λp = 685nm
Optical Power Output : 30 mW CW
Package Type
: TO-18 (5.6mmφ)
Built-in Photo Diode for Monitoring Laser Output
♦ ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A
LD cathod, PD anode (Fig. 1)
B
LD , PD anode (Fig. 2)
C
LD anode, PD cathod (Fig. 3)
Fig. 1
LD68I6SA
Fig. 2
LD68I6SB
Fig. 3
LD68I6SC