SBF50P10-023L Datasheet, PDF (2/3 Pages) Sensitron – RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - P-CHANNEL

SBF50P10-023L
SENSITRON
TECHNICAL DATA
DATA SHEET 4998, REV. -
Post-Total Dose (up to TID ratings) Irradiation Data
CHARACTERISTIC
SYMBOL
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = -250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = -10V, I_D = -20A
V_GS = - 4.5V, I_D = - 15A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = -250µA
ZERO GATE VOLTAGE DRAIN CURRENT
BV_DSS
R_DS(ON)
V_GS(th)
V_DS = 0.8 x Max. rating, V_GS = 0V, T_J = 25°C
I_DSS
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
I_GSS
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
DIODE FORWARD VOLTAGE
I_F = -20A, V_GS = 0V
V_SD
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
MIN.
-100
-
-1
-
-
-
TYP.
-
0.019
0.021
-
-
-
- 1.0
MAX.
-
0.023
0.025
-3
-1
100
-100
-1.5
UNITS
Volts
Ω
Volts
µA
nA
Volts
Single Event Effect Safe Operating Area
Ion
LET
(MeVcm²/mg)
Energy
(MeV)
Range
(µm) V_GS=0V
V_GS= 5V
V_DS (V)
V_GS= 10V V_GS= 15V
V_GS= 20V
Br
37.47
278
36.1 -100
-100
-100
-100
-100
I
59.72
320
31.1 -100
-100
-100
-100
-100
-120
-100
-80
-60
-40
-20
0
0
SEE Safe Operation Area
Br
I
5
10
15
20
VGS (V)
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