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SRADM1004 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC RAD HARD POWER MOSFET
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5399, REV. -
HERMETIC RAD HARD POWER MOSFET
SRADM1004
FEATURES:
 Low RDS(on)
 Single Event Effect (SEE) hardened, LET 55, Range: 90μm
o VGS = -15V, VDS = 250V
o VGS = -20V, VDS = 160V
 Total Ionization Dose (TID) hardened, 100kRad
 Surface mount SMD-2 package
 Near equivalent to IRHNA67260
MAXIMUM RATINGS
RATING
ALL RATINGS ARE AT T = 25C UNLESS OTHERWISE SPECIFIED.
C
SYMBOL MIN. TYP. MAX.
UNITS
DRAIN TO SOURCE VOLTAGE
GATE TO SOURCE VOLTAGE
VDS
-
-
250
Volts
VGS
-
-
20
Volts
ON-STATE DRAIN CURRENT
ID
-
-
54
Amps
PULSED DRAIN CURRENT (LIMITED BY TJMAX)
OPERATING AND STORAGE TEMPERATURE
IDM
-
-
214
Amps
TOP/TSTG
-55
-
+150
C
TOTAL DEVICE DISSIPATION
PD
-
-
250
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
RthJC
-
-
0.5
C/W
SINGLE PULSE AVALANCHE (LIMITED BY TJMAX)
EAS
-
380
-
mJ
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BVDSS
250
-
-
Volts
VGS = 0V, ID = 250A
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
RDS(ON)
-
-
0.03

VGS = 10V, ID = 34A
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 1mA
VGS(th)
2.0
-
4.0
Volts
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 200V, VGS = 0V
IDSS
-
-
25
A
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
IGSS
-
-
100
nA
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
-
-
-100
TRANSCONDUCTANCE
VDS = 20V, IDS = 34A
-
22
-
S
TURN ON DELAY TIME
VDD = 0.5VDS,
td(ON)
-
-
80
RISE TIME
ID = 34A,
tr
-
-
80
nsec
TURN OFF DELAY TIME
FALL TIME
RG = 4.7
td(OFF)
-
tf
-
-
130
-
80
DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME
If = 50A, di/dt = 100A/µs
IS =54A
VSD
-
-
1.2
Volts
trr
-
-
700
nsec
INPUT CAPACITANCE
VGS = 0 V
Ciss
- 11100 -
OUTPUT CAPACITANCE
VDS = 100 V
Coss
696
pF
REVERSE TRANSFER CAPACITANCE f = 1.0MHz Crss
11
GATE RESISTANCE
RG
-
0.9
-

TOTAL GATE CHARGE
QG
-
-
180
nC
VDD =0.5VDS, ID = 54A, VGS = 10V
**NOTE: This product is subject to the International Traffic in Arms Regulations (ITAR), 22 C.F.R. Parts 120 - 130, and
may not be exported without the appropriate U.S. Department of State authorization.
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