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SRADM1002 Datasheet, PDF (1/2 Pages) Sensitron – JHERMETIC RAD HARD POWER MOSFET N-CHANNEL QUAD
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5311, REV. A
SRADM1002
HERMETIC RAD HARD POWER MOSFET
N-CHANNEL QUAD
FEATURES:






Four 250 Volt, 0.36 Ohm, 4.4A RAD HARD MOSFETs
Single Event Effect (SEE) hardened, LET 55, Range: 90μm
o VGS = -15V, VDS = 250V
o VGS = -20V, VDS = 160V
Total Ionization Dose (TID) hardened, 100kRad (Level R)
Fast Switching
Low RDS (on)
Pin compatible with IRHQ57214SE, with 1/3rd the RDS(ON)
MAXIMUM RATINGS
RATING
ALL RATINGS ARE AT T = 25C UNLESS OTHERWISE SPECIFIED.
C
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
20
Volts
ON-STATE DRAIN CURRENT
ID
-
-
4.4
Amps
PULSED DRAIN CURRENT (LIMITED BY TJMAX)
OPERATING AND STORAGE TEMPERATURE
IDM
-
-
18
Amps
TOP/TSTG
-55
-
+150
C
TOTAL DEVICE DISSIPATION
PD
-
-
27
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
RthJC
-
-
4.7
C/W
AVALANCE ENERGY
EAS
-
-
20
mJ
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250A
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 3A
VGS = 10V, ID = 3A, TA = 125C
GATE THRESHOLD VOLTAGE VDS ≥ VGS, ID = 1mA
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TA = 125C
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
TURN ON DELAY TIME
VDD = .5VDS,
RISE TIME
ID = 3A,
TURN OFF DELAY TIME
RG = 4.7
FALL TIME
DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
IS = 4.4A
VGS = 0V
VDD = .5VDS,
If = 4.4A
VGS = 0 V
VDS = 100 V
f = 1.0MHz
SYMBOL
BVDSS
RDS(ON)
VGS(th)
IDSS
IGSS
td(ON)
tr
td(OFF)
tf
VSD
trr
Ciss
Coss
Crss
MIN.
250
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
295
0.36
-
3.4
-
-
-
-
10
10
15
11
0.95
210
580
45
2.3
MAX.
-
0.45
0.95
4.0
15
250
100
-100
14
14
20
16
1.3
250
700
60
3
UNITS
Volts

Volts
A
nA
nsec
Volts
nsec
pF
**This product is subject to the International Traffic in Arms Regulations (ITAR), 22 C.F.R. Parts 120 - 130, and may not
be exported without the appropriate U.S. Department of State authorization.
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