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SRADM1001 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC RAD HARD POWER N-CHANNEL MOSFET ARRAY
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5392, Preliminary.1
SRADM1001
HERMETIC RAD HARD POWER N-CHANNEL MOSFET
ARRAY
FEATURES:






Six individual 250 Volt, 0.16 Ohm, 12.4A RAD HARD MOSFETs (1)
Single Event Effect (SEE) hardened, LET 55, Range: 90μm
o VGS = -15V, VDS = 250V
o VGS = -20V, VDS = 160V
Single Event Effect (SEE) hardened, LET 85, Range: 118μm
o VGS = -10V, VDS = 250V
o VGS = -15V, VDS = 120V
Total Ionization Dose (TID) hardened, 100kRad (Level R)
Fast Switching
Low RDS (on)
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25C UNLESS OTHERWISE SPECIFIED.
C
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
20
Volts
ON-STATE DRAIN CURRENT
ID
-
-
12.4
Amps
PULSED DRAIN CURRENT (LIMITED BY TJMAX)
OPERATING AND STORAGE TEMPERATURE
IDM
-
-
50
Amps
TOP/TSTG
-55
-
+150
C
TOTAL DEVICE DISSIPATION
THERMAL RESISTANCE, JUNCTION TO CASE
PD
-
-
TBD
Watts
RthJC
-
-
TBD
C/W
AVALANCE ENERGY
EAS
-
-
60
mJ
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL MIN. TYP. MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BVDSS
250
-
-
VGS = 0V, ID = 250A
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
RDS(ON)
VGS = 10V, ID = 8A
-
-
0.16
GATE THRESHOLD VOLTAGE VDS ≥ VGS, ID = 1mA
VGS(th)
2.0
-
4.0
ZERO GATE VOLTAGE DRAIN CURRENT
Volts

Volts
VDS = 200V, VGS = 0V
IDSS
-
-
25
A
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
IGSS
-
-
100
nA
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
-
-
-100
TURN ON DELAY TIME
VDD = 125V
td(ON)
-
25
-
RISE TIME
ID = 8A,
tr
-
25
-
nsec
TURN OFF DELAY TIME
RG = 4.7
td(OFF)
-
30
-
FALL TIME
tf
-
20
-
DIODE FORWARD VOLTAGE
IS = 12.4A
VSD
VGS = 0V
REVERSE RECOVERY TIME
VDD = 125V
trr
If = 12.4A
INPUT CAPACITANCE
VGS = 0 V
Ciss
OUTPUT CAPACITANCE
VDS = 100 V
Coss
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
-
-
1.25
-
-
400
-
1300 1900
-
90
150
-
Volts
nsec
pF
**NOTE: This product is subject to the International Traffic in Arms Regulations (ITAR), 22 C.F.R. Parts 120 - 130,
and may not be exported without the appropriate U.S. Department of State authorization.
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