SPM6M080-010D Datasheet, PDF (1/14 Pages) Sensitron – Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4118, Rev. D.1
SPM6M080-010D
Three-Phase MOSFET BRIDGE, With Gate Driver and Optical
Isolation
DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
PARAMETER
MOSFET SPECIFICATIONS
Drain-to-Source Breakdown Voltage
I_D = 500 µA, V_GS = 0V
Continuous Drain Current
T_C = 25 ^OC
T_C = 90 ^OC
Pulsed Drain Current, Pulse Width limited to 1 msec
Zero Gate Voltage Drain Current
V_DS = 100 V, V_GS=0V T_i=25^oC
V_DS= 80 V, V_GS=0V T_i=125^oC
Static Drain-to-Source On Resistance,
I_D= 60A, V_GS = 15V,
Maximum Thermal Resistance
T_j = 25 ^OC
T_j = 150 ^OC
Maximum operating Junction Temperature
Maximum Storage Junction Temperature
SYMBOL
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
MIN TYP MAX UNIT
BV_DSS
I_D
I_DM
I_CSS
R_DSon
R_θJC
T_jmax
T_jmax
100
-
-
V
-
-
80
A
70
-
-
200
A
-
-
1
mA
3
mA
-
0.009 0.012
Ω
0.018
-
-
-
0.65 ^oC/W
-40
-
150
o_C
-55
-
150
o_C
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