SPM6M070-020D Datasheet, PDF (1/8 Pages) Sensitron – Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation

SENSITRON
SEMICONDUCTOR
SPM6M070-020D
TECHNICAL DATA
Datasheet 4171, Rev. -
Three-Phase MOSFET BRIDGE, With Gate Driver and Optical
Isolation
DESCRIPTION: A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
PARAMETER
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX
UNIT
MOSFET SPECIFICATIONS
Drain-to-Source Breakdown Voltage
I_D = 500 µA, V_GS = 0V
Continuous Drain Current
T_C = 25 ^OC
T_C = 90 ^OC
Pulsed Drain Current, Pulse Width limited by T_jMax
Gate to Source Voltage
BV_DSS
I_D
I_DM
V_GS
Gate- Source Leakage Current , V_GE = +/-20V
Zero Gate Voltage Drain Current
V_DS = 200 V, V_GS=0V T_i=25^oC
V_DS= 160 V, V_GS=0V T_i=125^oC
Static Drain-to-Source On Resistance,
O_C
T_j = 25 ^OC
T_j = 125
I_D= 50A, V_GS = 15V,
Maximum Thermal Resistance
I_GSS
I_CSS
R_DSon
R_θJC
Maximum operating Junction Temperature
T_jmax
Maximum Storage Junction Temperature
T_jmax
200
-
-
V
-
-
70
A
60
-
-
300
A
-
-
+/-20
V
-
-
+/- 200
nA
-
-
1
mA
3
mA
-
0.023 0.025
V
0.050
-
-
-
0.35 ^oC/W
-40
-
150
o_C
-55
-
150
o_C
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