SPM6M060-010D Datasheet, PDF (1/4 Pages) Sensitron – Three-Phase MOSFET Bridge With Gate Driver and Optical Isolation

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4096, Rev A
SPM6M060-010D
Three-Phase MOSFET Bridge, With Gate Driver and Optical Isolation
DESCRIPTION: A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
PARAMETER
MOSFET SPECIFICATIONS
Drain to Source Breakdown Voltage
I_C = 250 µA, V_GS = 0V
Continuous Drain Current
Pulsed Drain Current, 1mS
Gate to Source Voltage
T_C = 25 ^OC
T_C = 90 ^OC
Gate-Source Leakage Current , V_GS = +/-20V
Gate Threshold Voltage, I_C=1mA
Zero Gate Voltage Drain Current
V_CS = 600 V, V_GE=0V T_i=25^oC
V_CS= 480 V, V_GE=0V T_i=125^oC
On-State Resistance,
T_C = 25 ^OC
I_D = 10A, V_GS = 15V,
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
V_CS = 25 V, V_GE = 0 V, f = 1 MHz
Maximum Thermal Resistance
SYMBOL
BV_CSS
I_D
I_DM
V_GS
I_GSS
V _GS(TH)
I_CSS
R_DSon
C_iss
C_oss
C_res
R_θJC
MIN TYP MAX
UNIT
100
-
V
-
-
60
A
50
100
A
-
-
+/-20
V
+/- 100
nA
2
4
V
-
-
250
µA
500
µA
-
0.012 0.015
V
3950
850
250
-
-
pF
0.7 ^oC/W
• 221 West Industry Court 3 Deer Park, NY 11729 3 [phone] FAX [phone] •
• World Wide Web Site - http://www.sensitron.com • E-mail Address - [e-mail] •