SPM6M050-010D Datasheet, PDF (1/4 Pages) Sensitron – Three-Phase MOSFET BRIDGE 100 VOLT 50 AMP

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1161, REV. PRELIMINARY A
SPM6M050-010D
Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
MOSFET Characteristics
CHARACTERISTIC
SYMBOL
Continuous Drain Current I_D
Maximum Pulsed Drain
Current
Drain-to-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Static Drain-to-Source On
Resistance
Drain-to-Source Leakage
Current
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance
Operating and Storage
Junction Temperature
I_DM
V_(BR)DSS
V_GS(th)
R_DS
I_DSS
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
R_thjc
T_j
TEST CONDITIONS
V_GS=10V, T_C = 25 ^oC
T_C = 80 ^oC
T_C = 25 ^oC
T_j=25 ^oC, V_GS=0V,
I_D=500µA
V_DS = V_GS, T_j=25 ^oC
I_D = 500 µA
V_GS = 10 V,
I_D = 40 A
V_GS=0V,
T_j=25^oC V
V_DS=100V,
I_D = 50 A, V_GS = 10 V,
T_j=25^oC,
R_G = 5Ω ,
V_DD = 30V
V_DS = 25 V, V_GS = 0 V,
f = 1 MHz
-
-
MIN.
-
-
100
1.0
-
-
-
-
-
-40
TYP.
-
-
-
-
0.013
-
25
150
60
120
3.8
0.90
0.30
0.7
-
MAX.
50
50
150
-
3.0
0.018
250
-
1
150
UNIT
A
A
V
V
Ω
µA
ns
nF
o_C/W
o_C
Source Drain Diode Characteristics
CHARACTERISTIC
SYMBOL TEST CONDITIONS
Forward Voltage
V_SD
Reverse Recovery Time
t_rr
T_j=25 ^oC, I_F = 30A
T_j = 25 ^oC, I_S = 30 A,
di/dt = 100 A/ µs
MIN.
-
-
TYP.
0.80
90
MAX.
1.1
130
UNIT
V
ns
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