SPM6M020-060D Datasheet, PDF (1/13 Pages) Sensitron – Three-Phase MOSFET BRIDGE With Gate Driver and Optical Isolation 600 VOLT 20 AMP

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 4982, Rev. –
SPM6M020-060D
Three-Phase MOSFET BRIDGE, With Gate Driver and Optical
Isolation, 600 VOLT, 20 AMP
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
MOSFET SPECIFICATIONS
Drain to Source Breakdown Voltage
I_C = 250 µA, V_GS = 0V
Continuous Drain Current
Pulsed Drain Current, 1mS
T_C = 25 ^OC
T_C = 90 ^OC
Gate to Source Voltage
Gate-Source Leakage Current , V_GS = +/-20V
Gate Threshold Voltage, I_C=1mA
Zero Gate Voltage Drain Current
V_CS = 600 V, V_GE=0V T_i=25^oC
V_CS= 480 V, V_GE=0V T_i=125^oC
On-State Resistance,
T_C = 25 ^OC
T_C = 150 ^OC
I_D = 10A, V_CC = 15V,
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
V_CS = 25 V, V_GE = 0 V, f = 1 MHz
Over-Temperature Shutdown
Over-Temperature Shutdown
Over-Temperature Output
Temperature Sensor Output DC Offset
Accuracy, at temperature range from 0 ^oC to 125 ^oC
Over-Temperature Shutdown Hysteresis
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX UNIT
BV_CSS
I_D
I_DM
V_GS
I_GSS
V _GS(TH)
I_CSS
R_DSon
C_iss
C_oss
C_res
600
-
V
-
-
20
A
10
40
A
-
-
+/-20
V
+/- 100
nA
2.0
4.0
V
-
-
250
µA
500
µA
-
0.19 0.20
V
0.43
2400
pF
780
50
Tsd
100 107
115
o_C
Tso
10
mV/^oC
+0.0
mV
+/-1.0 +/-2.0
o_C
20
o_C
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