SPM6G250-120D Datasheet, PDF (1/5 Pages) Sensitron – Three-Phase IGBT BRIDGE With Gate Driver and Optical Isolation

SENSITRON
SEMICONDUCTOR
SPM6G250-120D
TECHNICAL DATA
DATASHEET 4109, REV ENG-
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 1200 VOLT, 250 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I_C = 250 µA, V_GE = 0V
Continuous Collector Current
Pulsed Collector Current, 1mS
T_C = 25 ^OC
T_C = 90 ^OC
Gate to Emitter Voltage
Gate-Emitter Leakage Current , V_GE = +/-20V
Gate Threshold Voltage, I_C=2mA
Zero Gate Voltage Collector Current
V_CE = 1200 V, V_GE=0V T_i=25^oC
V_CE = 900 V, V_GE=0V T_i=125^oC
Collector to Emitter Saturation Voltage,
I_C = 200A, V_GE = 15V,
T_C = 25 ^OC
Maximum Thermal Resistance
Brake IGBT
60A Maximum Current
Brake IGBT SPECIFICATIONS
Continuous Collector Current
Pulsed Collector Current, 0.5mS
T_C = 25 ^OC
T_C = 90 ^OC
Over-Temperature Shutdown
Over-Temperature Shutdown
Over-Temperature Shutdown Hysteresis
Over-Temperature Output
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX
UNIT
BV_CES
I_C
I_CM
V_GE
I_GES
V _GE(TH)
I_CES
V_CE(SAT)
R_θJC
1200
-
-
V
-
-
250
A
240
-
-
600
A
-
-
+/-20
V
-
-
+/- 300
nA
3.0
-
6.0
V
-
-
5
mA
40
mA
-
2.5
2.8
V
-
-
0.10 ^oC/W
0.20 ^oC/W
I_C
-
-
150
A
120
I_CM
-
-
300
A
Tsd
100
110
120
o_C
20
o_C
Tso
10
10mV/^oC
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