SPM6G150-060D Datasheet, PDF (1/4 Pages) Sensitron – Three-Phase IGBT BRIDGE With Gate Driver and Optical Isolation

SENSITRON
SEMICONDUCTOR
SPM6G150-060D
TECHNICAL DATA
DATASHEET 4113, REV A
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX
UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I_C = 250 µA, V_GE = 0V
Continuous Collector Current
Pulsed Collector Current, 1mS
Gate to Emitter Voltage
T_C = 25 ^OC
T_C = 90 ^OC
Gate-Emitter Leakage Current , V_GE = +/-20V
Zero Gate Voltage Collector Current
V_CE = 600 V, V_GE=0V T_i=25^oC
V_CE = 480 V, V_GE=0V T_i=125^oC
Collector to Emitter Saturation Voltage,
I_C = 100A, V_GE = 15V,
T_C = 25 ^OC
BV_CES
I_C
I_CM
V_GE
I_GES
I_CES
V_CE(SAT)
600
-
-
V
-
-
150
A
130
-
-
250
A
-
-
+/-20
V
-
-
+/- 100
nA
-
-
3
mA
20
mA
-
1.7
2.0
V
Maximum Thermal Resistance
R_θJC
-
-
0.25
o_C/W
Continuous Collector Current
Pulsed Collector Current, 0.5mS
Brake IGBT SPECIFICATIONS
T_C = 25 ^OC
I_C
T_C = 90 ^OC
-
-
80
60
I_CM
-
-
120
Maximum Thermal Resistance
R_θJC
-
-
0.45
Over-Temperature Shutdown
Over-Temperature Shutdown
Over-Temperature Shutdown Hysteresis
Over-Temperature Output
Tsd
100
110
120
20
Tco
10
A
A
o_C/W
o_C
o_C
10mV/^oC
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