SPM6G120-120D_08 Datasheet, PDF (1/15 Pages) Sensitron – Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4100, Rev. C
SPM6G120-120D
Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic
Isolation
DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I_C = 500uA, V_GE = 0V
Continuous Collector Current
T_C = 25 ^OC
T_C = 80 ^OC
Zero Gate Voltage Collector Current (For the module)
V_CE = 1200 V, V_GE=0V T_i=25^oC
V_CE = 800 V, V_GE=0V T_i=125^oC
Collector to Emitter Saturation Voltage,
I_C = 80A, V_GE = 15V,
T_j = 25 ^OC
T_j = 125 ^OC
IGBT Internal Turn On Gate Resistance
BV_CES
I_C
I_CES
V_CE(SAT)
1200
-
-
-
-
120
80
-
-
2
15
-
1.9
2.3
2.2
-
30
-
V
A
mA
mA
V
Ohm
IGBT Internal Turn Off Gate Resistance
-
10
-
Ohm
IGBT Internal Soft Shutdown Turn Off Gate Resistance
-
100
-
Ohm
IGBT turn-on switching loss
V_CE = 600 V, I_C = 40A Tj=25^oC
IGBT turn-off switching loss
V_CE = 600 V, I_C = 40A Tj=25^oC
Short Circuit Withstand Time, Conditions 600V DC link,
VGE=15V, T_jstart < 175 ^OC
DC Bus Voltage Rate of Rise With 15V Supply Removed,
dv/dt
Junction To Case Thermal Resistance
R_θJC
-
5.0
-
-
3.8
-
-
10
-
-
-
20
-
-
0.27
mJ
mJ
usec
V/usec
o_C/W
MODULE TOTAL WEIGHT
Total Weight
-
-
13
OZ
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