SPM6G120-120D Datasheet, PDF (1/17 Pages) Sensitron – Three-Phase IGBT BRIDGE With Gate Driver and Optical Isolation

SENSITRON
SEMICONDUCTOR
SPM6G120-120D
TECHNICAL DATA
Data Sheet 4100 Rev. -
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I_C = 2mA, V_GE = 0V
Continuous Collector Current
Pulsed Collector Current, 10mS
T_C = 25 ^OC
T_C = 80 ^OC
Zero Gate Voltage Collector Current (For the module)
V_CE = 1200 V, V_GE=0V T_i=25^oC
V_CE = 800 V, V_GE=0V T_i=125^oC
Collector to Emitter Saturation Voltage,
I_C = 80A, V_GE = 15V,
T_C = 25 ^OC
T_C = 125 ^OC
IGBT Internal Turn On Gate Resistance
BV_CES
I_C
I_CM
I_CES
V_CE(SAT)
1200
-
-
-
-
120
80
-
-
180
-
-
2
15
-
1.9
2.3
2.2
30
V
A
A
mA
mA
V
Ohm
IGBT Internal Turn Off Gate Resistance
10
Ohm
IGBT Internal Soft Shutdown Turn Off Gate Resistance
100
Ohm
Short Circuit Time, Conditions TBD
10
usec
DC Bus Voltage Rate of Rise With 15V Supply Removed,
dv/dt
Junction To Case Thermal Resistance
R_θJC
-
-
20
V/usec
-
-
0.27
o_C/W
MODULE TOTAL WEIGHT
Estimated Total Weight
-
-
13
OZ
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