SPM6G080-060D Datasheet, PDF (1/7 Pages) Sensitron – Three-Phase IGBT BRIDGE With Gate Driver and Optical Isolation

SENSITRON
SEMICONDUCTOR
SPM6G080-060D
TECHNICAL DATA
Data Sheet 4098, Rev. D
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I_C = 250 µA, V_GE = 0V
Continuous Collector Current
Pulsed Collector Current, 1mS
T_C = 25 ^OC
T_C = 90 ^OC
Gate to Emitter Voltage
Gate-Emitter Leakage Current , V_GE = +/-20V
Zero Gate Voltage Collector Current
V_CE = 600 V, V_GE=0V T_i=25^oC
V_CE = 480 V, V_GE=0V T_i=125^oC
Collector to Emitter Saturation Voltage,
I_C = 60A, V_GE = 15V,
Maximum Thermal Resistance
T_C = 25 ^OC
Brake IGBT SPECIFICATIONS
Continuous Collector Current
Pulsed Collector Current, 0.5mS
T_C = 25 ^OC
T_C = 90 ^OC
Brake Resistor SPECIFICATIONS
Maximum Continuous power dissipation
Impulse Energy
Maximum operating Junction Temperature
Maximum Storage Junction Temperature
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX
UNIT
BV_CES
I_C
I_CM
V_GE
I_GES
I_CES
V_CE(SAT)
R_θJC
I_C
I_CM
Pd
T_jmax
T_jmax
600
-
-
V
-
-
80
A
70
-
-
170
A
-
-
+/-20
V
-
-
+/- 100
nA
-
-
1
mA
10
mA
-
1.7
2.0
V
-
-
0.45 ^oC/W
-
-
40
A
25
-
-
120
A
2
80
-40
-
150
-55
-
150
watt
Joules
o_C
o_C
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