SPM6G070-060D Datasheet, PDF (1/19 Pages) Sensitron – Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4328, Rev. A.1
SPM6G070-060D
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I_C = 500 μA, V_GE = 0V
Continuous Collector Current
T_C = 25 ^OC
T_C = 80 ^OC
Pulsed Collector Current, Pulse Width limited by T_jMax
Zero Gate Voltage Collector Current
V_CE = 600 V, V_GE=0V T_i=25^oC
V_CE = 480 V, V_GE=0V T_i=125^oC
Collector to Emitter Saturation Voltage,
IC=30A
IC=70A
IC=90A
Maximum Thermal Resistance
T_j = 25 ^OC
Maximum operating Junction Temperature
Maximum Storage Junction Temperature
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX UNIT
BV_CES
I_C
I_CM
I_CES
V_CE(SAT)
R_θJC
T_jmax
T_jmax
600
-
-
V
-
-
75
A
60
-
-
150
A
-
-
1
mA
10
mA
-
V
1.15 1.30
1.50 1.80
1.70 2.00
-
-
0.50 ^oC/W
-40
-
150
o_C
-55
-
150
o_C
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