SPM6G060-120D Datasheet, PDF (1/6 Pages) Sensitron – Three-Phase IGBT BRIDGE With Gate Driver and Optical Isolation

SENSITRON
SEMICONDUCTOR
SPM6G060-120D
TECHNICAL DATA
Datasheet 4165, Rev. B
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I_C = 500 µA, V_GE = 0V
Continuous Collector Current
T_C = 25 ^OC
T_C = 90 ^OC
Pulsed Collector Current, Pulse Width limited by T_jMax
Gate to Emitter Voltage
Gate-Emitter Leakage Current , V_GE = +/-20V
Zero Gate Voltage Collector Current
V_CE = 1200 V, V_GE=0V T_i=25^oC
V_CE = 800 V, V_GE=0V T_i=125^oC
Collector to Emitter Saturation Voltage,
I_C = 40A, V_GE = 15V,
Maximum Thermal Resistance
T_j = 25 ^OC
T_j = 125 ^OC
Maximum operating Junction Temperature
Maximum Storage Junction Temperature
BV_CES
I_C
I_CM
V_GE
I_GES
I_CES
V_CE(SAT)
R_θJC
T_jmax
T_jmax
1200
-
-
V
-
-
60
A
40
-
-
100
A
-
-
+/-20
V
-
-
+/- 200
nA
-
-
1
mA
10
mA
-
1.9
2.3
V
2.1
-
-
-
0.6 ^oC/W
-40
-
150
o_C
-55
-
150
o_C
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