SPM4012006 Datasheet, PDF (1/5 Pages) Sensitron – Dual MOSFET BRIDGE, With Gate Driver

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 5024, Preliminary
SPM4012006
Dual MOSFET BRIDGE, With Gate Driver
DESCRIPTION: A 60 VOLT, 12 AMP, DUAL MOSFET BRIDGE
A high density Dual H-Bridge capabable of driving 12A peak at 60V. This small
footprint dual bridge contains low Rdson power FETs , FET drivers and precision
current sense reistors. The device does not need heat sinking and is housed in an
encapsulated sealed enclosure. The drive input signals are TTL compatable.
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
PARAMETER
MOSFET SPECIFICATIONS (Per Device)
Drain-to-Source Breakdown Voltage
Continuos Drain Current
T_C = 25 ^OC
T_C = 100 ^OC
Pulsed Drain Current, Pulse Width limited to 1 msec
Zero Gate Voltage Drain Current
V_DS = 60V, V_GS=0V T_i=25^oC
V_DS= 60 V, V_GS=0V T_i=125^oC
Static Drain-to-Source On Resistance,
I_D= 7.5A, V_GS = 10V,
Maximum Thermal Resistance
T_j = 25 ^OC
T_j = 150 ^OC
Maximum operating Junction Temperature
Maximum Storage Junction Temperature
Rise Time
Fall Time
SYMBOL
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
MIN TYP MAX UNIT
BV_DSS
I_D
I_DM
I_CSS
R_DSon
R_θJC
T_jmax
T_jmax
tr
tf
60
-
-
-
-
12
8.7
-
-
97
-
-
20
250
-
7.4
9.4
14.8
18.8
-
-
35
-40
-
150
-55
-
150
20
20
V
A
A
uA
uA
mΩ
o_C/W
o_C
o_C
ns
ns
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