SPM4007010 Datasheet, PDF (1/5 Pages) Sensitron – Dual MOSFET BRIDGE, With Gate Driver

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 5030, Preliminary
SPM4007010
Dual MOSFET BRIDGE, With Gate Driver
DESCRIPTION: A 100 VOLT, 7.5 AMP, DUAL MOSFET BRIDGE
A high density Dual H-Bridge capabable of driving 7.5A peak at 100V. This small
footprint dual bridge contains low Rdson power FETs , FET drivers and precision
current sense reistors. The device does not need heat sinking and is housed in an
encapsulated sealed enclosure. The drive input signals are TTL compatable.
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
PARAMETER
SYMBOL
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
MIN TYP MAX UNIT
MOSFET SPECIFICATIONS (Per Device)
Drain-to-Source Breakdown Voltage
BV_DSS
100
-
-
V
Continuos Drain Current
T_C = 25 ^OC
T_C = 100 ^OC
Pulsed Drain Current, Pulse Width limited to 1 msec
Zero Gate Voltage Drain Current
V_DS = 80V, V_GS=0V T_i=25^oC
V_DS= 80 V, V_GS=0V T_i=125^oC
Static Drain-to-Source On Resistance,
I_D= 7.5A, V_GS = 10V,
Maximum Thermal Resistance
T_j = 25 ^OC
T_j = 150 ^OC
I_D
I_DM
I_CSS
R_DSon
R_θJC
-
-
7.5
A
4.8
-
-
50
A
-
-
1
uA
250
uA
-
0.019 0.023
Ω
0.035 .043
-
-
35
o_C/W
Maximum operating Junction Temperature
T_jmax
-40
-
150
o_C
Maximum Storage Junction Temperature
Rise Time
Fall Time
T_jmax
tr
tf
-55
-
150
o_C
30
ns
30
ns
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