SHSMG1010 Datasheet, PDF (1/3 Pages) Sensitron – 1000 VOLT 50 AMP IGBT DEVICE

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 2049, REV. -
Formerly part number –SHSMG1010
1000 VOLT, 50 AMP IGBT DEVICE
HIGH SPEED, LOW V_CE IGBT
SHD739601
ELECTRICAL CHARACTERISTICS
PARAM ETER
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX
UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I_C = 3 mA, V_GE = 0V
Continuous Collector Current
Pulsed Collector Current, 1mS
T_C = 25 ^OC
T_C = 90 ^OC
RBSOA
V_GE = 15V, V_CE = 800V, T_j = 125 ^OC
L = 100 uH, Clamped Inductive Load
Gate to Emitter Voltage
Gate-Emitter Leakage Current, V_GE = +/-20V
BV_CES
I_C
I_CM
I_CM
V_GE
I_GES
1000
-
-
V
-
-
50
A
25
-
-
100
A
-
-
50
A
-
-
+/-20
V
-
-
+/- 100
nA
Gate Threshold Voltage, I_C= 0.25 mA, V_CE = V_GE
Zero Gate Voltage Collector Current
V_CE = 800 V, V_GE=0V T_i=25^oC
V_CE = 800 V, V_GE=0V T_i=125^oC
Collector to Emitter Saturation Voltage,
I_C = 25A, V_GE = 15V,
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
V_CE = 25 V, V_GE = 0 V, f = 1 MHz
T_C = 25 ^OC
T_C = 125 ^OC
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn off Energy Loss
T_j = 125 ^OC, I_C = 25A, V_GE = 15V, inductive load,
V_CE = 800 V, R_G= 33 Ω
V_GE(TH)
I_CES
V_CE(SAT)
C_ies
C_oes
C_res
t_d(on)
t_r
t_d(off)
t_f
E_off
E_on
Maximum Thermal Resistance
R_θJC
2.5
-
5.0
-
-
0.25
-
-
1.0
-
3.5
4.0
3.8
4.5
-
2750
-
200
50
-
100
-
-
250
-
720
-
800
-
-
-
8.0
-
-
3.5
-
-
-
0.60
V
mA
mA
V
pF
nsec
mJ
mJ
o_C/W
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