SHDC626112_09 Datasheet, PDF (1/4 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
SHDC626112
SHDC626112P
SHDC626112N
SHDC626112D
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATA SHEET 4185, Rev. B
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC TO-257 PACKAGE (GLASS SEALS NOT AVAILABLE FOR THIS VOLTAGE)
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at
high frequency; use part number prefix SHDG
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC, for part numbers
with P and N suffixes)
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC, for part number
with D suffix or without suffix)
PIV
1200
Volts
I_O
20
Amps
I_O
10
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
I_FRM
50
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10μs, pulse) per leg, T_C = 25 ^OC
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
I_FSM
250
Amps
P_d
40
W
MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL
PACKAGE For Common Cathode/Anode Configurations)
R_θJC
1.00
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
Top, Tstg -55 to
°C
+200
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
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