SHDC626112 Datasheet, PDF (1/4 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
SHDC626112
SHDC626112P
SHDC626112N
SHDC626112D
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATA SHEET 4185, Rev. -
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC TO-257 PACKAGE (GLASS SEALS NOT AVAILABLE FOR THIS VOLTAGE)
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• High Temperature Option - Maximum operation & storage temperature can be increased to 250^oC;
use part number prefix as SHDT
• High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at
high frequency; use part number prefix SHDG
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC, for part numbers
I_O
with P and N suffixes)
20
Amps
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC, for part number
with D suffix or without suffix)
I_O
10
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
I_FRM
50
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10µs, pulse) per leg, T_C = 25 ^OC
I_FSM
250
Amps
MAXIMUM JUNCTION CAPACITANCE (V_r =400V) per leg
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
C_T
70
pF
P_d
40
W
MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL
PACKAGE For Common Cathode/Anode Configurations)
R_θJC
1.00
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top, Tstg -55 to
°C
+175
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