SHDC626052 Datasheet, PDF (1/4 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
SHDC626052
SHDC626052P
SHDC626052N
SHDC626052D
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATA SHEET 4079, Rev. E
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC TO-257 PACKAGE (GLASS SEALS NOT AVAILABLE FOR THIS VOLTAGE)
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• High Temperature Option - Maximum operation & storage temperature can be increased to 250^oC;
use part number prefix as SHDT
• High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at
high frequency; use part number prefix SHDG
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC, for part numbers
with P and N suffixes)
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC, for part number
with D suffix or without suffix)
PIV
1200
Volts
I_O
10
Amps
I_O
5
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
I_FRM
30
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10µs, pulse) per leg, T_C = 25 ^OC
I_FSM
100
Amps
MAXIMUM JUNCTION CAPACITANCE (V_r =5V) per leg
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL
PACKAGE For Common Cathode/Anode Configurations)
C_T
P_d
R_θJC
450
pF
30
W
1.50
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top, Tstg -55 to
°C
+175
• 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE [phone] • FAX [phone] •
• World Wide Web - http://www.sensitron.com • E-mail Address - [e-mail] •