SHDC624122_09 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATA SHEET 4984, REV. B
SHDC624122
SHDC624122P
SHDC624122N
SHDC624122D
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 40 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-258
PACKAGE WITH CERAMIC SEAL
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• SCREENED VERSIONS ARE AVAILABLE
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT PER LEG (With Cathode Maintained @ T_C =
I_O
65 ^OC)
20
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) T_C = 25 ^OC
I_FRM
60
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURREN PER LEG
(t = 10μs, pulse) T_C = 25 ^OC
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
I_FSM
250
Amps
P_d
80
W
MAXIMUM THERMAL RESISTANCE, Junction to Case, Per Dual Package
MAXIMUM OPERATING TEMPERATURE RANGE
R_θJC
0.5
°C/W
Top
-55 to
°C
+175
MAXIMUM STORAGE TEMPERATURE RANGE*
Tstg
-55 to
°C
+200
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
FORWARD VOLTAGE DROP PER LEG(I_f = 20A) V_f
T_J = 25 °C
T_J = 175 °C
REVERSE CURRENT PER LEG (1200V PIV) I_r
T_J = 25 °C
T_J=175 °C
JUNCTION CAPACITANCE (V_r =400V, f = 1MHz) C_T PER LEG
T_J = 25 °C
TOTAL CAPACITIVE CHARGE PER LEG (V_R=1200V I_F=10A di/dt=500A/μs
T_J=25°C) Q_C
TYP
1.6
2.5
0.02
0.04
140
100
MAX.
1.8
3.0
0.40
2.00
N/A
N/A
UNITS
Volts
mA
pF
nC
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