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SHD724602 Datasheet, PDF (1/3 Pages) Sensitron – 600 VOLT 70 AMP IGBT DEVICE
SENSITRON
SEMICONDUCTOR
SHD724602
TECHNICAL DATA
DATA SHEET 4205, REV-
600 VOLT, 70 AMP IGBT DEVICE
VERY HIGH SPEED
WITH ULTRAFAST REVERSE RECOVERY DIODE
ELECTRICAL CHARACTERISTICS
PARAMETER
(Tj=250C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX
UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 250 µA, VGE = 0V
Continuous Collector Current
OC
Pulsed Collector Current, 1msec
Gate to Emitter Voltage
BVCES
TC = 25 OC IC
TC = 90
ICM
VGE
600
-
-
V
-
-
45 (1)
A
30
-
-
150
A
-
-
+/-20
V
Gate-Emitter Leakage Current, VGE = +/-20V
IGES
Gate Threshold Voltage, IC= 250 µA
Zero Gate Voltage Collector Current
VCE = 600 V, VGE=0V Ti=25oC
VCE = 480 V, VGE=0V Ti=125oC
VGE(TH)
ICES
Collector to Emitter Saturation Voltage,
OC
TC = 25
IC = 24A, VGE = 15V,
OC
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
VCE = 25 V, VGE = 0 V, f = 1 MHz
TC = 125
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn off Energy Loss
(Tj = 125 OC, IC = 24A, VGE = 15V, inductive load, VCC =
400 V, RG = 5 Ω
VCE(SAT)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eoff
Eon
-
-
+/- 100
nA
2.5
-
5.0
V
-
-
0.2
mA
-
-
3.0
mA
-
2.2
2.5
V
2.0
-
-
1500
-
145
40
-
13
-
-
17
-
130
-
80
-
-
0.38
-
- 0.22
-
pF
nsec
mJ
mJ
Maximum Thermal Resistance
RθJC
-
-
0.85
oC/W
Maximum and Storage Junction Temperature
Tjmax
-55
-
150
oC
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