SHD724502 Datasheet, PDF (1/3 Pages) Sensitron – 1200 VOLT 35 AMP IGBT DEVICE

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1004, REV. A
Formerly part number SHDG1025
SHD724502
1200 VOLT, 35 AMP IGBT DEVICE
HIGH SPEED, IMPROVED SCSOA
WITH FAST REVERSE RECOVERY DIODE
ELECTRICAL CHARACTERISTICS
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I_C = 250 μA, V_GE = 0V
Continuous Collector Current
Gate to Emitter Voltage
T_C = 25 ^OC
T_C = 90 ^OC
Gate-Emitter Leakage Current I_GE = +/-20V
Gate Threshold Voltage, I_C=2mA
Zero Gate Voltage Collector Current
V_GE=0V V_CE = 1200 V, T_i=25^oC
V_CE = 800 V, T_i=125^oC
Collector to Emitter Saturation Voltage
I_C = 35A, V_GE = 15V
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
V_CE = 25 V, V_GE = 0 V, f = 1 MHz
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn-off Energy Loss
Turn-on Energy Loss
(I_C = 30A, V_GE = 15V, V_CE = 600 V, R_G = 5 Ω
Junction-to-Case Thermal Resistance
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX
UNIT
BV_CES
I_C
V_GE
I_GES
V _GE(TH)
I_CES
V_CE(SAT)
C_ies
C_oes
C_res
t_d(on)
t_r
t_d(off)
t_f
E_off
E_on
R_θJC
-
-
1200
-
-
40 ⁽¹⁾
35
-
-
+/-20
-
-
+/-500
4.5
6.0
7.5
-
-
1000
5.0
-
2.7
3.3
- 8400
-
350
90
-
90
-
-
50
-
270
-
80
-
-
4.7
-
-
5.5
-
-
-
0.35
V
A
V
nA
V
μA
mA
V
pF
nsec
mJ
mJ
o_C/W
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