SHD724402 Datasheet, PDF (1/3 Pages) Sensitron – 600 VOLT 40 AMP IGBT DEVICCE

SENSITRON
SEMICONDUCTOR
SHD724402
TECHNICAL DATA
DATA SHEET 994, REV. B
Formerly part number SHDG1024
600 VOLT, 40 AMP IGBT DEVICE
HIGH SPEED, IMPROVED SCSOA
WITH FAST REVERSE RECOVERY DIODE
ELECTRICAL CHARACTERISTICS
PARAMETER
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX
UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I_C = 250 µA, V_GE = 0V
Continuous Collector Current
Pulsed Collector Current, 1mS
T_C = 25 ^OC
T_C = 90 ^OC
Short Circuit time, V_GE = 15V, V_CE = 500V, T_j = 125 ^OC
di/dt < 300 A/µsec, I_C< 300A
Gate to Emitter Voltage
BV_CES
I_C
I_CM
t_sc
V_GE
Gate-Emitter Leakage Current, V_GE = +/-20V
I_GES
Gate Threshold Voltage, I_C=2mA
Zero Gate Voltage Collector Current
V_CE = 600 V, V_GE=0V T_i=25^oC
V_CE = 480 V, V_GE=0V T_i=125^oC
Collector to Emitter Saturation Voltage,
I_C = 40A, V_GE = 15V,
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
V_CE = 25 V, V_GE = 0 V, f = 1 MHz
T_C = 25 ^OC
T_C = 125 ^OC
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn off Energy Loss
(T_j = 125 ^OC, I_C = 40A, V_GE = 15V, inductive load, V_CC =
300 V, R_G = 22 Ω
V_GE(TH)
I_CES
V_CE(SAT)
C_ies
C_oes
C_res
t_d(on)
t_r
t_d(off)
t_f
E_off
E_on
Maximum Thermal Resistance
R_θJC
600
-
-
-
-
-
-
-
-
40 ⁽¹⁾
40
130
10
V
A
A
µsec
-
-
+/-20
V
-
-
+/- 100
nA
4.0
-
7.0
V
-
-
0.25
-
-
3.0
-
2.0
2.3
2.3
2.5
- 2800
-
300
200
- 100
-
-
50
-
300
-
40
-
- ^1.5
-
- ^2.0
-
-
-
0.60
Ma
mA
V
pF
nsec
mJ
mJ
o_C/W
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