SHD724401 Datasheet, PDF (1/2 Pages) Sensitron – 600 VOLT 40 AMP IGBT DEVICE

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1006, REV. -
Formerly part number –SHSMG1009
600 VOLT, 40 AMP IGBT DEVICE
HIGH SPEED, IMPROVED SCSOA
SHD724401
ELECTRICAL CHARACTERISTICS
PARAMETER
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX
UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I_C = 250 μA, V_GE = 0V
Continuous Collector Current
Pulsed Collector Current, 1mS
T_C = 25 ^OC
T_C = 90 ^OC
Short Circuit time, V_GE = 15V, V_CE = 500V, T_j = 125 ^OC
di/dt < 300 A/ sec, I_C< 300A
Gate to Emitter Voltage
BV_CES
I_C
I_CM
t_sc
V_GE
Gate-Emitter Leakage Current, V_GE = +/-20V
I_GES
Gate Threshold Voltage, I_C=2mA
Zero Gate Voltage Collector Current
V_CE = 600 V, V_GE=0V T_i=25^oC
V_CE = 480 V, V_GE=0V T_i=125^oC
Collector to Emitter Saturation Voltage,
I_C = 40A, V_GE = 15V,
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
V_CE = 25 V, V_GE = 0 V, f = 1 MHz
T_C = 25 ^OC
T_C = 125 ^OC
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn off Energy Loss
(T_j = 125 ^OC, I_C = 40A, V_GE = 15V, inductive load, V_CC =
300 V, R_G = 22 Ω
V_GE(TH)
I_CES
V_CE(SAT)
C_ies
C_oes
C_res
t_d(on)
t_r
t_d(off)
t_f
E_off
E_on
Maximum Thermal Resistance
R_θJC
600
-
-
V
-
-
40 ⁽¹⁾
A
40
-
-
130
A
-
-
10
sec
-
-
+/-20
V
-
-
+/- 100
nA
4.0
-
7.0
V
-
-
-
-
0.25
3.0
-
2.0
2.3
2.3
2.5
- 2800
-
300
200
- 100
-
-
50
-
300
-
40
-
-
1.5
-
- 2.0
-
-
-
0.60
Ma
mA
V
pF
nsec
mJ
mJ
o_C/W
(1) Current is limited by package leads. Die current rating is 65A.
(2) Current is limited by package leads. Die current rating is 75A.
(3) Current is limited by package leads. Die current rating is 50A.
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