SHD626051_1 Datasheet, PDF (1/4 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
SHD626051
SHD626051P
SHD626051N
SHD626051D
TECHNICAL DATA
DATA SHEET 4074, REV. D.1
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 600-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-257
PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at
high frequency; use part number prefix SHDG
• Ceramic Seal Option – For ceramic seals use part number prefix SHDC
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC, for part numbers with P and
N suffixes)
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC, for part numbers with Single
and D suffixes)
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 10µs, Pulse) per leg, T_C = 25 ^OC
MAXIMUM JUNCTION CAPACITANCE (V_r =5V) per leg
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC,
MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE
For Common Cathode/Anode Configurations)
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
PIV
I_O
I_O
I_FRM
I_FSM
C_T
P_d
R_θJC
Top, Tstg
600
20
10
50
250
350
40
2.1
-55 to
+175
Volts
Amps
Amps
Amps
Amps
pF
W
°C/W
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP
Pulsed (I_f = 10 A PER LEG) V_f
T_J = 25°C
1.65
T_J = 150 °C
1.85
MAXIMUM FORWARD VOLTAGE DROP
Pulsed (I_f = 6 A PER LEG) V_f
T_J = 25°C
1.35
T_J = 150 °C
1.50
MAXIMUM REVERSE CURRENT (I_r @ 600V PIV PER LEG) T_J = 25 °C
0.04
T_J = 150 °C
0.08
TOTAL CAPACITIVE CHARGE (V_R=600V I_F=10A di/dt=500A/µs T_J=25°C) Q_C per
40
leg
1.75
1.95
Volts
1.45
1.60
Volts
0.15
0.50
mA
N/A
nC
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