SHD626031 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
SHD626031
SHD626031P
SHD626031N
SHD626031D
TECHNICAL DATA
DATA SHEET 4284, REV. D
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 600-VOLT, 8 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-257
PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• High Temperature Option - Maximum operation & storage temperature can be increased to 250^oC;
use part number prefix as SHDT
• High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at
high frequency; use part number prefix SHDG
• Ceramic Seal Option – For ceramic seals use part number prefix SHDC
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC, for part numbers with P and
I_O
N suffixes)
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC, for part numbers with Single
I_O
and D suffixes)
600
Volts
8
Amps
4
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
I_FRM
20
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 10µs, Pulse) per leg, T_C = 25 ^OC
I_FSM
110
Amps
MAXIMUM JUNCTION CAPACITANCE (V_r =5V) per leg
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC,
C_T
220
pF
P_d
20
W
MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE
R_θJC
For Common Cathode/Anode Configurations)
5.6
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top, Tstg
-55 to
°C
+175
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP
Pulsed (I_f = 4 A PER LEG) V_f
T_J = 25°C
T_J = 175 °C
MAXIMUM REVERSE CURRENT (I_r @ 600V PIV PER LEG) T_J = 25 °C
T_J = 175 °C
TOTAL CAPACITIVE CHARGE (V_R=600V I_F=4A di/dt=500A/µs T_J=25°C) Q_C per leg
1.50
2.00
0.025
0.050
10
1.85
2.40
0.200
1.0
N/A
Volts
mA
nC
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