SHD620112_09 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
SHD620112
SHD620112P
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATA SHEET 4179, REV. B
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC LCC-5 PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• SCREENED VERSIONS ARE AVAILABLE
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C = 65 ^OC, for
I_O
Single Package)
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C = 65 ^OC, for
I_O
Dual Package)
1200
10
20
Volts
Amps
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) T_C = 25 ^OC
MAXIMUM NON-REPETITIVE FORWARD SURGE CURREN
(t = 10μs, pulse) T_C = 25 ^OC
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
MAXIMUM THERMAL RESISTANCE, Junction to Case
MAXIMUM OPERATING TEMPERATURE RANGE
I_FRM
50
Amps
I_FSM
250
Amps
P_d
20
W
R_θJC
1.8
°C/W
Top
-55 to
°C
+200
MAXIMUM STORAGE TEMPERATURE RANGE
Tstg
-55 to
°C
+200
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP (I_f = 10A) V_f
MAXIMUM REVERSE CURRENT (1200V PIV) I_r
MAXIMUM JUNCTION CAPACITANCE (V_r =400V)
T_J = 25 °C
T_J = 175 °C
T_J = 25 °C
T_J=175 °C
C_T
TOTAL CAPACITIVE CHARGE (V_R=1200V I_F=10A di/dt=500A/μs T_J=25°C) Q_C
1.6
2.5
0.01
0.02
70
60
1.8
3.0
0.20
1.00
N/A
Volts
mA
PF
nC
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