SHD620112 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
SHD620112
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATA SHEET 4179, REV. A
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC LCC-5 PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• SCREENED VERSIONS ARE AVAILABLE
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC = 65 ^OC)
PIV
1200
Volts
IO
10
Amps
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC = 65 ^OC)
IO
10
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) TC = 25 ^OC
MAXIMUM NON-REPETITIVE FORWARD SURGE CURREN
(t = 10µs, pulse) TC = 25 ^OC
MAXIMUM JUNCTION CAPACITANCE (Vr =400V)
MAXIMUM POWER DISSIPATION, TC = 25 ^OC
MAXIMUM THERMAL RESISTANCE, Junction to Case
MAXIMUM OPERATING TEMPERATURE RANGE
MAXIMUM STORAGE TEMPERATURE RANGE
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
MAXIMUM FORWARD VOLTAGE DROP (If = 10A) Vf
TJ = 25 °C
TJ = 175 °C
MAXIMUM REVERSE CURRENT (1200V PIV) Ir
TJ = 25 °C
TJ=175 °C
TOTAL CAPACITIVE CHARGE (VR=1200V IF=10A di/dt=500A/µs TJ=25°C) QC
IFRM
IFSM
CT
Pd
R_θJC
Top
Tstg
TYP
1.6
2.5
0.01
0.02
60
50
250
70
20
1.8
-55 to
+175
-55 to
+175
Amps
Amps
PF
W
°C/W
°C
°C
MAX.
1.8
3.0
0.20
1.00
N/A
UNITS
Volts
mA
nC
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