SHD620052_09 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
SHD620052
SHD620052P
TECHNICAL DATA,
DATA SHEET 4080, REV. E
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC LCC-5 PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• SCREENED VERSIONS ARE AVAILABLE
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C = 65 ^OC,
I_O
Single Package)
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C = 65 ^OC,
I_O
Dual Package)
1200
5
10
Volts
Amps
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) T_C = 25 ^OC
I_FRM
30
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
I_FSM
(t = 10μs, pulse) T_C = 25 ^OC
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
P_d
100
Amps
15
W
MAXIMUM THERMAL RESISTANCE, Junction to Case
R_θJC
2.60
°C/W
MAXIMUM OPERATING TEMPERATURE RANGE
Top
-55 to +175
°C
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
Top, Tstg
-55 to +200
°C
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP (I_f = 5 A)
MAXIMUM REVERSE CURRENT (1200V PIV)
MAXIMUM JUNCTION CAPACITANCE (V_r =5V)
V_f
I_r
T_J = 25 °C
T_J = 175 °C
T_J = 25 °C
T_J=150 °C
C_T
1.6
2.6
0.05
0.10
450
1.8
3.0
0.20
1.00
Volts
mA
PF
TOTAL CAPACITIVE CHARGE (V_R=1200V I_F=5A di/dt=500A/μs T_J=25°C) Q_C
28
N/A
nC
Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche
capabilities of the device are limited.
Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially
damaging conditions in their applications.
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