SHD620052 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA,
DATA SHEET 4080, REV. D
SHD620052
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC LCC-5 PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• SCREENED VERSIONS ARE AVAILABLE
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C = 65 ^OC)
PIV
1200
Volts
I_O
5
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) T_C = 25 ^OC
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 10µs, pulse) T_C = 25 ^OC
MAXIMUM JUNCTION CAPACITANCE (V_r =5V)
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
MAXIMUM THERMAL RESISTANCE, Junction to Case
MAXIMUM OPERATING TEMPERATURE RANGE
I_FRM
30
Amps
I_FSM
100
Amps
C_T
450
PF
P_d
15
W
R_θJC
2.60
°C/W
Top
-55 to
°C
+175
MAXIMUM STORAGE TEMPERATURE RANGE
Tstg
-55 to
°C
+175
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP (I_f = 5 A)
V_f
T_J = 25 °C
T_J = 175 °C
MAXIMUM REVERSE CURRENT (1200V PIV)
I_r
T_J = 25 °C
T_J=150 °C
TOTAL CAPACITIVE CHARGE (V_R=1200V I_F=5A di/dt=500A/µs T_J=25°C) Q_C
1.6
2.6
0.05
0.10
28
1.8
3.0
0.20
1.00
N/A
Volts
mA
nC
Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche
capabilities of the device are limited.
Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially
damaging conditions in their applications.
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