SHD620051_10 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4077, REV. F
SHD620051
SHD620051P
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 600-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC LCC-5 PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• AVAILABLE SCREENED TO ANY REQUIRED LEVEL
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC for P and N suffixes)
I_O
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC for Single and D suffixes)
I_O
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
I_FRM
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC,
P_d
600
Volts
20
Amps
10
Amps
50
Amps
40
W
MAXIMUM THERMAL RESISTANCE, Junction to Case PER LEG
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
R_θJC
Top, Tstg
2.5
-55 to 200
°C/W
°C
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the
packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be
performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP
Pulsed (I_f = 10 A PER LEG) V_f
T_J = 25°C
T_J = 150 °C
MAXIMUM FORWARD VOLTAGE DROP
Pulsed (I_f = 6 A PER LEG) V_f
T_J = 25°C
T_J = 150 °C
MAXIMUM REVERSE CURRENT (I_r @ 600V PIV PER LEG) T_J = 25 °C
T_J = 150 °C
JUNCTION CAPACITANCE C_T) (V_r =5V) per leg
C_T
TOTAL CAPACITIVE CHARGE
Q_C per leg
(V_R=600V I_F=20A di/dt=500A/μs T_J=25°C) This is design information only
1.65
1.80
2.05
2.20
Volts
1.35
1.45
1.60
1.70
Volts
0.04
0.15
0.08
0.50
mA
250
350
pF
35
N/A
nC
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