SHD620031_09 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4283, REV. A
SHD620031
SHD620031P
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 600-VOLT, 8 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC
LCC-5 PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• AVAILABLE SCREENED TO ANY REQUIRED LEVEL
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C = 65 ^OC, for
I_O
Dual Package)
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C = 65 ^OC, for
I_O
Single Package)
600
Volts
8
Amps
4
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 10μs, Pulse) per leg, T_C = 25 ^OC
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE)
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
I_FRM
I_FSM
P_d
R_θJC
Top, Tstg
20
110
20
5.3
-55 to
+200
Amps
Amps
W
°C/W
°C
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the
packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only
be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP, Pulsed (I_f = 4 A PER LEG)
T_J = 25 °C
V_f
T_J = 175 °C
MAXIMUM REVERSE CURRENT (I_r @ 600V PIV PER LEG)
T_J = 25 °C
I_r
T_J = 175 °C
JUNCTION CAPACITANCE (V_r =5V) per leg
C_T
TOTAL CAPACITIVE CHARGE (V_R=600V I_F=4A di/dt=500A/μs T_J=25°C) Q_C per
leg
1.50
2.00
0.025
0.050
220
10
1.85
2.40
0.200
1.000
N/A
Volts
mA
pF
nC
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