SHD619112 Datasheet, PDF (1/4 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
SHD619112
SHD619112P
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATA SHEET 4208, REV. A
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC LCC-3P PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• SCREENED VERSIONS ARE AVAILABLE
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C = 65 ^OC, for
I_O
Dual Package)
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C = 65 ^OC, for
I_O
Single Package)
1200
20
10
Volts
Amps
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
I_FRM
50
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 10μs, pulse) per leg, T_C = 25 ^OC
I_FSM
250
Amps
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
P_d
40
W
MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE)
R_θJC
0.9
°C/W
MAXIMUM OPERATING and STORAGE TEMPERATURE RANGE*
Top, Tstg -55 to +200
°C
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the
packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be
performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
MAXIMUM FORWARD VOLTAGE DROP (I_f = 10A PER LEG) V_f
MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) I_r
MAXIMUM JUNCTION CAPACITANCE (V_r =400V) per leg
T_J = 25 °C
T_J = 175 °C
T_J = 25 °C
T_J=175 °C
TOTAL CAPACITIVE CHARGE (V_R=1200V I_F=10A di/dt=500A/μs T_J=25°C) Q_C
per leg
TYP
1.6
2.5
0.01
0.02
70
60
MAX.
1.8
3.0
0.20
1.00
N/A
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UNITS
Volts
mA
PF
nC