SHD619052 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
SHD619052
SHD619052P
TECHNICAL DATA,
DATA SHEET 5053 REV. A
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC LCC-3P PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• SCREENED VERSIONS ARE AVAILABLE
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C = 65 ^OC)
PIV
1200
Volts
I_O
10
Amps
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C = 65 ^OC, for
I_O
Single Package)
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
I_FRM
(t = 8.3ms, Sine) T_C = 25 ^OC
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
I_FSM
(t = 10μs, pulse) T_C = 25 ^OC
5
Amps
30
Amps
100
Amps
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
MAXIMUM THERMAL RESISTANCE, Junction to Case (per dual package)
MAXIMUM OPERATING TEMPERATURE RANGE*
P_d
R_θJC
Top &Tstg
15
1.30
-55 to
+200
W
°C/W
°C
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP (I_f = 5 A per leg) V_f
T_J = 25 °C
T_J = 150 °C
MAXIMUM REVERSE CURRENT (1200V PIV per leg) I_r
T_J = 25 °C
T_J=150 °C
TOTAL CAPACITIVE CHARGE (V_R=1200V I_F=5A di/dt=500A/μs T_J=25°C) Q_C
per leg
MAXIMUM JUNCTION CAPACITANCE (V_r =5V) PER LEG
C_T
1.6
2.6
0.05
0.10
28
450
1.8
3.0
0.20
1.00
N/A
Volts
mA
nC
PF
Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche
capabilities of the device are limited.Customer designs will need to accommodate these limitations and avoid exposure of the device
to this and other potentially damaging conditions in their applications.
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