SHD246723 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5032, REV. A
SHD246723
HERMETIC POWER MOSFET
N-CHANNEL
SHD246723S -- S-100 (JANTX) Screening
FEATURES:
• 60 Volt, 1.6 Ohm, 0.3 A MOSFET
• Isolated Hermetic, Ceramic Package
• Fast Switching
• Low R_{DS (on)}
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
RATING
SYMBOL MIN. TYP. MAX.
UNITS
DRAIN TO SOURCE VOLTAGE
GATE TO SOURCE VOLTAGE
V_DS
-
-
60
Volts
V_GS
-
-
±20
Volts
ON-STATE DRAIN CURRENT @ T_C = 25°C
I_{D (on)}
-
-
0.3
Amps
PULSED DRAIN CURRENT @ T_C = 25°C
OPERATING AND STORAGE TEMPERATURE
I_DM
-
-
3.0
Amps
T_OP/T_STG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION @ T_C = 25°C
THERMAL RESISTANCE, JUNCTION TO CASE
P_D
-
-
1250
mW
R_thJC
-
-
100
°C/W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BV_DSS
60
-
-
V_GS = 0V, I_D = 0.1 mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
-
-
Pulse width = 300µs,
V_GS = 10V, I_D = 500mA
R_DS(ON)
1.6
Duty cycle ≤ 2%
V_GS = 5V, I_D = 200mA
4.0
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 0.25 mA V_GS(th)
1.0
-
2.5
ZERO GATE VOLTAGE DRAIN CURRENT
-
-
V_DS = 60V, V_GS = 0V
V_DS = 48V, V_GS = 0V, T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 10V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -10V
V_DS = 0V
TURN ON TIME
V_DD = 30V,
I_D = 200mA,
TURN OFF
V_GS = 10V
INPUT CAPACITANCE
V_GS = 0 V,
OUTPUT CAPACITANCE
V_DS = 25 V,
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
+
I_DSS
I_GSS
t_(ON)
t_(OFF)
C_iss
C_oss
C_rss
10
100
-
-
200
-200
-
25
-
35
-
-
30
-
7
3
Volts
Ω
Volts
µA
nA
nsec
pF
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE [phone] • FAX [phone]•
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - [e-mail] •