SHD244702 Datasheet, PDF (1/3 Pages) Sensitron – LOW RDS HERMETIC POWER MOSFET - P-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD244702
TECHNICAL DATA
DATA SHEET 4190, REV. -
LOW R_DS HERMETIC POWER MOSFET - P-CHANNEL
FEATURES:
• 60 Volt, 0.015 Ohm, 50A MOSFET
• Isolated Hermetic Metal Package
• Ultra Low R_{DS (on)}
• Characterized at V_GS of 4.5V
MAXIMUM RATINGS
RATING
ALL
RATINGS
ARE
AT
T
C
=
25°C
UNLESS
OTHERWISE
SPECIFIED.
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
V_GS
-
-
±20
Volts
I_D25
-
-
- 50
Amps
I_DM
-
-
- 80
Amps
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
THERMAL RESISTANCE, JUNCTION TO CASE
T_J/T_STG
-55
P_D
-
R_θJC
-
-
+150
°C
-
270
Watts
-
0.50
°C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = - 250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = - 10V, I_D = - 17A
V_GS = - 4.5V, I_D = - 14A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = - 250µA
FORWARD TRANSCONDUCTANCE
V_DS = - 15V, I_D = - 17A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS = 0V, T_J = 25°C
T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
RISE TIME
V_DD = - 30V
I_D = - 50A
TURN OFF DELAY TIME
V_GS= - 10V
FALL TIME
R_G = 6Ω
DIODE FORWARD VOLTAGE
I_F = - 50A, V_GS = 0V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
REVERSE RECOVERY TIME
T_J = 25°C,
I_F= - 50A, V_R = 100V
di/dt = 100A/µsec
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_GS = 0 V,
V_DS = - 25 V,
f = 1.0MHz
SYMBOL
BV_DSS
-
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
MIN.
-60
-
-
-1
-
-
-
-
-
-
-
TYP.
-
0.012
0.016
-
61
-
-
15
70
175
175
1.0
45
4950
480
405
MAX.
-
0.015
0.020
-3
-
-1
- 50
100
-100
23
105
260
260
1.6
70
-
UNITS
Volts
Ω
Volts
S(1/ Ω )
µA
nA
nsec
Volts
nsec
pF
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