SHD239607 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 623, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 600 Volt, 0.35 Ohm MOSFET
• Isolated and Hermetically Sealed
• Surface Mount Package
• Electrically equivalent to IXTM20N60
SHD239607
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
A
SYMBOL MIN. TYP. MAX.
UNITS
V_GS
-
-
±20
Volts
V_GS=10V, T_C = 25°C
I_D
-
-
20
Amps
PULSED DRAIN CURRENT
@ T_C = 25°C
I_DM
-
-
80
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
°C
TERMAL RESISTANCE JUNCTION TO CASE
R_θJC
-
-
0.27
°C/W
TOTAL DEVICE DISSIPATION @ T_C = 25°C
P_D
-
-
450
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250μA
DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 10A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250μA
FORWARD TRANSCONDUCTANCE
V_DS = 10V, I_D = 10A
ZERO GATE VOLTAGE DRAIN CURRENT, T_J = 25°C
(V_DS = 0.8xMax. Rating, V_GS = 0V), T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TOTAL GATE CHARGE
V_GS = 10 V,
GATE TO SOURCE CHARGE
V_DS = 300V,
GATE TO DRAIN CHARGE
I_D = 10A
TURN ON DELAY TIME
V_DS = 300V,
RISE TIME
I_D = 10A,
TURN OFF DELAY TIME
R_G = 2.0Ω,
FALL TIME
V_GS = 10V
DIODE FORWARD VOLTAGE
T_J = 25°C, I_F = I_S
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25°C,
I_F = I_S,
di/dt ≤ = 100A/μsec
INPUT CAPACITANCE
OUTPUT CAPACITANCE
V_GS = 0V, V_DS = 25V,
f=1MHz
REVERSE TRANSFER CAPACITANCE
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
MIN.
600
-
2.0
11
-
-
-
-
-
-
-
TYP.
-
-
-
18
-
-
150
29
60
20
43
70
40
-
600
4500
420
140
MAX.
-
0.35
4.5
-
250
1000
100
-100
170
40
85
40
60
90
60
1.5
-
-
UNITS
Volts
Ω
Volts
S(1/Ω)
μA
nA
nC
nsec
Volts
nsec
pF
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