SHD239606 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 702, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 500 Volt, 0.23 Ohm MOSFET
œ Isolated and Hermetically Sealed
œ Surface Mount Package
SHD239606
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
ALL RATINGS ARE AT T_A = 25•C UNLESS OTHERWISE SPECIFIED.
SYMBOL MIN. TYP. MAX.
UNITS
V_GS
-
-
–20
Volts
V_GS=10V, T_C = 25•C
I_D
-
-
24
Amps
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
96
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ _JC
-
-
0.27
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
450
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250mA
DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 12A
GATE THRESHOLD VOLTAGE
V_DS = V_GS, I_D = 4mA
FORWARD TRANSCONDUCTANCE
V_DS = 10V, I_D = 12A
ZERO GATE VOLTAGE DRAIN CURRENT, T_J = 25•C
(V_DS = 0.8xMax. Rating, V_GS = 0V), T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TOTAL GATE CHARGE
V_GS = 10 V,
GATE TO SOURCE CHARGE
V_DS = 250V,
GATE TO DRAIN CHARGE
I_D = 12A
TURN ON DELAY TIME
V_Ds = 250V,
RISE TIME
I_D = 12A,
TURN OFF DELAY TIME
R_G = 2.0W,
FALL TIME
V_GS = 10V
DIODE FORWARD VOLTAGE
T_J = 25•C, I_F = I_S
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
I_F = I_S,
di/dt ˆ = 100A/msec
REVERSE RECOVERY CHARGE
INPUT CAPACITANCE
V_GS = 0V, V_DS = 25V,
OUTPUT CAPACITANCE
f=1MHz
REVERSE TRANSFER CAPACITANCE
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
500
-
-
-
-
0.23
2.0
-
4.0
15
21
-
-
-
250
1000
-
-
100
-100
-
135
160
28
40
62
85
-
16
25
33
45
65
80
30
40
-
-
1.5
-
-
250
1.0
-
4200
-
450
135
Volts
W
Volts
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE [phone] FAX [phone]
World Wide Web - http://www.sensitron.com E-mail Address - [e-mail]