SHD239603 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 826, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 200 Volt, 0.045 Ohm, 50A MOSFET
œ Hermetic Metal Package
œ Low R_{DS (on)}
SHD239603
MAXIMUM RATINGS
ALL RATINGS ARE AT T_C = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
ON-STATE DRAIN CURRENT
I_D25
-
-
50
Amps
PULSED DRAIN CURRENT
I_DM
-
-
200
Amps
OPERATING AND STORAGE TEMPERATURE
T_J/T_STG
-55
-
+150
•C
TOTAL DEVICE DISSIPATION
P_D
-
-
460
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
R¡ _JC
-
-
0.27
•C/W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 0.5I_D25
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 4.0 mA
FORWARD TRANSCONDUCTANCE
V_DS = 10V, I_D = 0.5I_D25
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS = 0V, T_J = 25•C
T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DS = 0.5Vœ
RISE TIME
V_DSS, I_D = 0.5œI_D25
TURN OFF DELAY TIME
V_GS=10V
FALL TIME
R_G = 1.0W
DIODE FORWARD VOLTAGE
I_F = I_S, V_GS = 0V
Pulse test, t ˆ 300 ms, duty cycle d ˆ 2 %
REVERSE RECOVERY TIME
T_J = 25•C,
I_F=25A, V_R = 100V
di/dt = 100A/msec
INPUT CAPACITANCE
V_GS = 0 V,
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_DS = 25 V,
f = 1.0MHz
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
200
-
-
-
-
0.045
2.0
-
4.0
26
32
-
-
-
200
1000
-
-
100
-100
-
18
25
15
20
72
90
16
25
-
-
1.5
-
400
-
-
4400
-
800
280
Volts
W
Volts
S(1/W)
mA
nA
nsec
Volts
nsec
pF
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