English
Language : 

SHD239602 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 337, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 100 Volt, 0.020 Ohm MOSFET
œ Isolated and Hermetically Sealed
œ Surface Mount Package
SHD239602
MAXIMUM RATINGS
RATING
ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT VGS=10V, TC = 25•C
ID
-
-
75
Amps
VGS=10V, TC = 100•C
60
PULSED DRAIN CURRENT
@ TC = 25•C
IDM
-
-
300
Amps
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
+150
•C
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ TC = 25•C
R¡ JC
-
-
0.30
•C/W
PD
-
-
300
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250mA
DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 37.5A
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 1mA
FORWARD TRANSCONDUCTANCE
VDS ˜ 10V, ID = 75A
ZERO GATE VOLTAGE DRAIN CURRENT, TJ = 25•C
(VDS = 0.8xMax. Rating, VGS = 0V), TJ = 125•C
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
TOTAL GATE CHARGE
VGS = 10 V,
GATE TO SOURCE CHARGE
VDS = 50V,
GATE TO DRAIN CHARGE
ID =37.5A
TURN ON DELAY TIME
VDD = 250V,
RISE TIME
ID = 3.7A,
TURN OFF DELAY TIME
RG = 2.0W,
FALL TIME
VGS = 15V
DIODE FORWARD VOLTAGE
TJ = 25•C, IF =, IS
VGS = 0V
REVERSE RECOVERY TIME
TJ = 25•C,
IS = 10A,
di/dt ˆ = 100A/msec,
REVERSE RECOVERY CHARGE
INPUT CAPACITANCE
OUTPUT CAPACITANCE
VGS = 0V, VDS = 25V,
f=1MHz
REVERSE TRANSFER CAPACITANCE
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
VSD
trr
Qrr
Ciss
Coss
Crss
100
-
-
-
-
0.02
2.0
-
4.0
25
-
-
-
-
250
1000
-
-
100
-100
-
180
260
36
70
85
160
-
20
30
40
40
50
75
20
40
-
-
1.3
-
-
200
1.4
-
4500
-
1600
800
Volts
W
Volts
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com
 ▷