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SHD239504 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1097, REV. -
SHD239504
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 400 Volt, 0.3 Ohm, 9.0A MOSFET
œ Low RDS (on)
œ Electrically Equivalent to IRF350 Series
MAXIMUM RATINGS
RATING
ALL
RATINGS
ARE
AT
T
C
=
25•C
UNLESS
OTHERWISE
SPECIFIED.
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
–20
Volts
ON-STATE DRAIN CURRENT
@ TC = 25•C
ID
-
-
14
Amps
ON-STATE DRAIN CURRENT
@ TC = 100•C
ID
-
-
9.0
Amps
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
+150
•C
THERMAL RESISTANCE, JUNCTION TO CASE
RthJC
-
-
0.37
•C/W
TOTAL DEVICE DISSIPATION @ TC = 25•C
PD
-
-
340
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 9.0A
VGS = 10V, ID = 14A
GATE THRESHOLD VOLTAGE VDS ˜ 15VGS, IDS = 9.0A
FORWARD TRANSCONDUCTANCE
VDS ˜ 15V, IDS = 9.0A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = Max. Rating, VGS = 0V
VDS = 0.8xMax. Rating, VGS = 0V, TJ = 125•C
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
TURN ON DELAY TIME
VDD = 200V,
RISE TIME
ID = 14A,
TURN OFF DELAY TIME
RG = 2.35W
FALL TIME
TOTAL GATE CHARGE
ID = 14A,
GATE TO SOURCE CHARGE
VGS = 10V,
GATE TO DRAIN CHARGE
VDS =0.5xMax. Rating
DIODE FORWARD VOLTAGE
TC = 25•C, IS = 14A,
VGS = 0V
REVERSE RECOVERY CHARGE
TJ = 25•C,
di/dt ˆ 100A/msec, VDD ˆ 50V
REVERSE RECOVERY TIME
TJ = 25•C,
IF = 14A,
di/dt ˆ 100A/msec, VDD ˆ 50V
INPUT CAPACITANCE
VGS = 0 V
OUTPUT CAPACITANCE
VDS = 25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
SYMBOL
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
VSD
QRR
trr
Ciss
Coss
Crss
MIN.
400
-
6.0
6.0
-
-
-
52
5.0
25
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
2600
680
250
MAX.
-
0.3
0.4
-
-
250
1000
100
-100
35
190
170
130
110
18
65
1.7
11
1200
-
UNITS
Volts
W
Volts
S(1/W)
mA
nA
nsec
nC
nC
nC
Volts
mC
nsec
pF
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