SHD231009 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC P-CHANNEL JFET

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4305, REV -
HERMETIC P-CHANNEL JFET
FEATURES: • 30 V, 75 Ω, 30 mA P-Channel JFET
• Hermetically Sealed
• Surface Mount Package: Ceramic LCC-3
SHD231009
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
A
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE I_D = 1µA, V_DS = 0V
V_GS
-
-
30
V
SATURATED DRAIN CURRENT V_GS = 0V, V_DS = -18V
I_DSS
-30
-
-90
mA
GATE TO DRAIN BREAKDOWN VOLTAGE
BV_GD
-
-
30
V
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+175
°C
TERMAL RESISTANCE JUNCTION TO CASE
R_θJC
-
-
300
°C/W
TOTAL DEVICE DISSIPATION @ T_C = 25°C
P_D
-
-
0.5
W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 0V, I_D = -1 mA
GATE SOURCE CUT OFF VOLTAGE
V_DS = -15V, I_D = -1 nA
COMMON SOURCE TRANSCONDUCTANCE
V_DS = -15V, I_D = -1 mA
DRAIN CUT OFF CURRENT,
V_DS = -15V, V_GS = 12V T_A = 25°C
T_A = 125°C
GATE REVERSE CURRENT
V_GS = 20V
T_A = 125°C
TURN ON DELAY TIME
V_DD = - 10V,
RISE TIME
I_D = - 15 mA,
TURN OFF DELAY TIME
R_G = 100Ω,
FALL TIME
V_GS = 20V
GATE SOURCE FORWARD VOLTAGE
I_G = - 1 mA
V_DS = 0V
INPUT CAPACITANCE V_GS = 0V, V_DS = -15V, f = 1MHz
R_DS(ON)
V_GS(OFF)
g_fs
I_D(OFF)
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_GS(F)
C_iss
-
-
75
-
5
10
-
4.5
-
-
- 10 - 500
-
- 0.02
-1
-
5
500
-
0.01
1
-
6
-
10
6
15
-
- 0.7
-1
-
20
25
Ω
V
S(1/Ω)
pA
µA
pA
µA
ns
V
pF
REVERSE TRANSFER CAPACITANCE
V_GS = 12V, V_DS = 0V, f = 1MHz
C_rss
-
5
7
pF
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