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SHD231008 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC DEPLETION MODE DMOS N-CHANNEL
SHD231008
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4302, REV -
HERMETIC DEPLETION MODE DMOS
N-CHANNEL
FEATURES: • 250 V, 6 Ω, 300 mA DMOS N-Channel FET
• Hermetically Sealed
• Surface Mount Package: Ceramic LCC-3
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
A
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
V
SATURATED DRAIN SOURCE CURRENT VGS = 0V,
IDSS
-
-
300
mA
VDS = 15V TC = 25°C
PULSED DRAIN CURRENT
@ TC = 25°C
IDM
-
-
1000
mA
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
+150
°C
TERMAL RESISTANCE JUNCTION TO CASE
RθJC
-
-
15
°C/W
TOTAL DEVICE DISSIPATION @ TC = 25°C
PD
-
-
1.6
W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BVDSX
250
-
-
VGS = -5V, ID = 100 µA
DRAIN TO GATE BREAKDOWN VOLTAGE
BVDGX
250
-
-
VGS = -5V, ID = 100 µA
DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 0V, ID = 200 mA
RDS(ON)
-
-
6
GATE SOURCE OFF VOLTAGE VDS = 15V, ID = 1 mA
VGS(OFF)
-1.5
-
-3.5
FORWARD TRANSCONDUCTANCE
gfs
225
-
-
VDS = 10V, ID = 150 mA
DRAIN SOURCE LEAKAGE CURRENT,
ID(OFF)
-
-
VDS = 0.8 x Max Rating, VGS = -5V
TJ = 25°C
1
TJ = 125°C
1
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
IGSS
-
-
100
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
-100
TURN ON DELAY TIME
VDD = 25V,
td(ON)
-
20
-
RISE TIME
ID = 150 mA,
tr
25
TURN OFF DELAY TIME
RG = 25Ω,
td(OFF)
25
FALL TIME
VGS = 0V to - 10V
tf
40
DIODE FORWARD VOLTAGE TJ = 25°C,ISD = 150 mA
VSD
-
-
1.8
VGS = -5V
REVERSE RECOVERY TIME
TJ = 25°C,
trr
-
800
-
VGS = -5V, ISD = 150mA
INPUT CAPACITANCE
VGS = -5V, VDS = 25V,
Ciss
-
-
350
OUTPUT CAPACITANCE
f = 1.0MHz
Coss
60
REVERSE TRANSFER CAPACITANCE
Crss
20
V
V
Ω
V
S(1/Ω)
µA
mA
nA
ns
V
ns
pF
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