SHD231006_10 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4322, REV. A
SHD231006
HERMETIC POWER MOSFET
N-CHANNEL
SHD231006S -- S-100 (JANTX level room temp) Screening per Sensitron datasheet
FEATURES:
• 60 Volt, 3.0 Ohm, 0.25 A MOSFET
• Isolated Hermetic, Ceramic Package
• Fast Switching
• Low R_{DS (on)}
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
RATING
SYMBOL MIN. TYP. MAX.
UNITS
DRAIN TO SOURCE VOLTAGE
GATE TO SOURCE VOLTAGE
V_DS
-
-
60
Volts
V_GS
-
-
±20
Volts
ON-STATE DRAIN CURRENT @ T_C = 25°C
I_{D (on)}
-
-
0.25
Amps
PULSED DRAIN CURRENT @ T_C = 25°C
OPERATING AND STORAGE TEMPERATURE
I_DM
-
-
1.3
Amps
T_OP/T_STG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION @ T_C = 25°C
THERMAL RESISTANCE, JUNCTION TO CASE
P_D
-
-
2.5
W
R_thJC
-
-
50
°C/W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BV_DSS
60
-
-
V_GS = 0V, I_D = 10μA
ON-STATE DRAIN CURRENT V_DS = 7.5V, V_GS = 10V
I_D(on)
-
0.8
-
Pulse width = 300μs, Duty cycle ≤ 2%
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
-
-
Pulse width = 300μs,
V_GS = 10V, I_D = 500mA RDS(ON)
3.0
Duty cycle ≤ 2%
V_GS = 5V, I_D = 200mA
4.0
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250μA
V_GS(th)
1.0
-
2.5
FORWARD TRANSCONDUCTANCE
g_fs
-
250
-
V_DS = 15V, I_D = 200mA
ZERO GATE VOLTAGE DRAIN CURRENT
-
-
V_DS = 60V, V_GS = 0V
V_DS = 60V, V_GS = 0V, T_C = 125°C
GATE TO SOURCE LEAKAGE FORWARD
GATE TO SOURCE LEAKAGE REVERSE
V_GS = 15V
V_GS = -15V
V_DS = 0V
TOTAL GATE CHARGE
GATE-SOURCE CHARGE
GATE-DRAIN CHARGE
V_DS = 30V,
V_GS = 10V,
I_D = 250mA
TURN ON DELAY TIME
RISE TIME
TURN OFF DELAY TIME
V_DD = 25V,
I_D = 150mA,
FALL TIME
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_GS = 0 V,
V_DS = 25 V,
f = 1.0MHz
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
C_iss
C_oss
C_rss
1
500
-
-
1
-1
0.4
0.6
0.06
0.06
-
7.5
20
6.0
7.5
20
3.0
-
25
-
6.0
1.2
Volts
Amp
Ω
Volts
S(1/Ω)
μA
μA
nC
nsec
pF
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