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SHD230704 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL QUAD
SENSITRON
SEMICONDUCTOR
SHD230704
TECHNICAL DATA
DATA SHEET 4965, REV. -
HERMETIC POWER MOSFET
N-CHANNEL QUAD
FEATURES:
• 100 Volt, 0.18 Ohm, 5A MOSFET
• Fast Switching
• Low RDS (on)
• Characterized at VGS of 6V
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
ID
-
-
5
Amps
PULSED DRAIN CURRENT
@ TC = 25°C
IDM
-
-
20
Amps
OPERATING AND STORAGE TEMPERATURE
TJ/TSTG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION @ TC = 25°C
THERMAL RESISTANCE, JUNCTION TO CASE
PD
-
-
27
Watts
RthJC
-
-
4.7
°C/W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BVDSS
100
-
-
VGS = 0V, ID = 250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 3.6A
RDS(ON)
-
-
0.18
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 6V, ID = 2.4A
RDS(ON)
-
-
0.20
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250µA
VGS(th)
2.0
-
4.0
FORWARD TRANSCONDUCTANCE
gfs
-
7
-
VDS = 15V; IDS = 3.6A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x Max. rating, VGS = 0V
IDSS
-
TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
IGSS
-
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
TURN ON DELAY TIME
VDD = 50V,
td(ON)
-
RISE TIME
ID = 3.6A,
tr
TURN OFF DELAY TIME
FALL TIME
RG = 6Ω
td(OFF)
tf
-
1
100
-
100
-100
-
30
30
40
30
DIODE FORWARD VOLTAGE
IS = 7.4A, VGS = 0V
VSD
-
-
1.5
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
REVERSE RECOVERY TIME
TJ = 25°C
If = 3.6A
trr
di/dt ≤ 100A/µsec
-
-
80
INPUT CAPACITANCE
VGS = 0 V
Ciss
OUTPUT CAPACITANCE
VDS = 25 V
Coss
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
Crss
-
370
-
60
30
Volts
Ω
Ω
Volts
S(1/Ω)
µA
nA
nsec
Volts
nsec
pF
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